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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC4DHM/D
Sensitive Gate TRIACS
Silicon Bidirectional Thyristors
* Small Size Surface Mount DPAK Package * Passivated Die for Reliability and Uniformity * Four-Quadrant Triggering * Blocking Voltage to 600 V * On-State Current Rating of 4.0 Amperes RMS at 93C * Low Level Triggering and Holding Characteristics
G ORDERING INFORMATION * To Obtain "DPAK" in Surface Mount Leadform (Case 369A) Shipped in Sleeves -- No Suffix, i.e. MAC4DHM Shipped in 16 mm Tape and Reel -- Add "T4" Suffix to Device Number, i.e. MAC4DHMT4 * To Obtain "DPAK" in Straight Lead Version (Case 369) Shipped in Sleeves -- Add "-1" Suffix to Device Number, i.e. MAC4DHM-1 MT2
MAC4DHM MAC4DLM
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. TRIACS 4.0 AMPERES RMS 600 VOLTS
MT2 MT1 MT1 MT2 G
CASE 369A-13 STYLE 6
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (1) (TJ = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 93C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 110C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 msec, TC = 93C) Average Gate Power (t = 8.3 msec, TC = 93C) Peak Gate Current (Pulse Width 10 msec, TC = 93C) Peak Gate Voltage (Pulse Width 10 msec, TC = 93C) Operating Junction Temperature Range Storage Temperature Range MAC4DHM MAC4DLM IT(RMS) 4.0 ITSM 40 I2t PGM 0.5 PG(AV) 0.1 IGM VGM TJ Tstg 0.2 5.0 -40 to 110 -40 to 150 Amps Volts C 6.6 A2sec Watts Symbol VDRM 600 600 Amps Value Unit Volts
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (2) Symbol RqJC RqJA RqJA Max 3.5 88 80 Unit C/W
Maximum Lead Temperature for Soldering Purposes (3) TL 260 C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data (c) Motorola, Inc. 1997
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MAC4DHM MAC4DLM
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristics Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) Peak On-State Voltage (1) (ITM = 6.0 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MAC4DLM MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MAC4DHM TJ = 25C TJ = 110C VTM -- IGT -- -- -- -- -- -- -- -- VGT 0.5 0.5 0.5 0.5 0.1 IH -- IL (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 5.0 mA) (VD = 12 V, IG = 10 mA) -- -- -- -- 1.75 5.2 2.1 2.2 10 10 10 10 1.5 15 mA 0.62 0.57 0.65 0.74 0.4 1.3 1.3 1.3 1.3 -- mA 1.8 2.1 2.4 4.2 1.8 2.1 2.4 4.2 3.0 3.0 3.0 5.0 5.0 5.0 5.0 10 Volts 1.3 1.6 mA Symbol IDRM -- -- -- -- 0.01 2.0 Volts Min Typ Max Unit mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) (VD = 12 V, RL = 10 K W, TJ = 110C) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-); MT2(-), G(+) Holding Current (VD = 12 V, Gate Open, IT = 200 mA) Latching Current MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+)
DYNAMIC CHARACTERISTICS
Characteristics Rate of Change of Commutating Current (1) (VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/msec, TJ = 110C, f = 250 Hz, CL = 5.0 mfd, LL = 80 mH, RS = 56 W, CS = 0.03 mfd) See Figure 10 Critical Rate of Rise of Off-State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 110C) (1) Pulse test: Pulse Width 2.0 msec, Duty Cycle 2%. Symbol di/dt(c) -- 3.0 -- Min Typ Max Unit A/ms
dv/dt -- 10 --
V/ms
2
Motorola Thyristor Device Data
MAC4DHM MAC4DLM
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 6.0 180 5.0

dc
105
a = 30
60 90
120 90
4.0 3.0 2.0
a = CONDUCTION ANGLE
100

95
120
a = CONDUCTION ANGLE
180 dc 3.5 4.0
a = 30
1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
60
90 0 0.5 1.0 1.5 2.0 2.5 3.0 IT(RMS), RMS ON-STATE CURRENT (AMPS)
4.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
TYPICAL @ TJ = 25C 10 MAXIMUM @ TJ = 110C
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
100
1.0
0.1 ZqJC(t) = RqJC(t)Sr(t)
1.0
MAXIMUM @ TJ = 25C 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.01 0.1 1.0 10 100 1000 10 K t, TIME (ms)
Figure 3. On-State Characteristics
Figure 4. Transient Thermal Response
8.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 7.0 6.0 5.0 4.0 Q2 3.0 Q1 2.0 1.0 0 -40 -25 -10 5.0 20 35 50 65 80 95 110 Q3 Q4
1.0 Q4 Q1 0.8 Q2 0.6 Q3
0.4
0.2 -40 -25 -10 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Figure 5. Typical Gate Trigger Current versus Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus Junction Temperature
Motorola Thyristor Device Data
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MAC4DHM MAC4DLM
5.0 12 10 8.0 6.0 4.0
IH , HOLDING CURRENT (mA)
IL, LATCHING CURRENT (mA)
4.0
3.0 MT2 NEGATIVE 2.0 MT2 POSITIVE 1.0 0 -40 -25
Q2
Q4 Q3
2.0 Q1 0
-10
5.0
20
35
50
65
80
95
110
-40 -25
-10
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Typical Holding Current versus Junction Temperature
Figure 8. Typical Latching Current versus Junction Temperature
20 MT2 POSITIVE 15 STATIC dv/dt (V/ ms) MT2 NEGATIVE 10 dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ ms) VD = 400 V TJ = 110C
10 VPK = 400 V
TJ = 110C
100C
90C
1.0
5.0
tw VDRM
f=
1 2 tw
6f I (di/dt)c = TM 1000
0 100 1000 RGK, GATE-MT1 RESISTANCE (OHMS) 10 K
0.1 0 1.0 2.0 3.0 4.0 5.0 6.0 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(+)
Figure 10. Critical Rate of Rise of Commutating Voltage
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Motorola Thyristor Device Data
MAC4DHM MAC4DLM
80 mHY LL MEASURE I TRIGGER CHARGE CONTROL TRIGGER CONTROL RS 56 W - CS 2 1N914 51 G 1 0.03 mF + ADJUST FOR dv/dt(c) 1N4007
200 VRMS ADJUST FOR ITM, 60 Hz VAC
CHARGE
200 V
5 mF NON-POLAR CL
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
Motorola Thyristor Device Data
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MAC4DHM MAC4DLM
PACKAGE DIMENSIONS
-T- B V R
4
SEATING PLANE
C E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 ---
S
1 2 3
A K F L D G
2 PL
Z U
J H 0.13 (0.005) T
DIM A B C D E F G H J K L R S U V Z
M
CASE 369A-13 ISSUE Y
STYLE 6: PIN 1. 2. 3. 4.
MT1 MT2 GATE MT2
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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Motorola Thyristor Device Data MAC4DHM/D

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